shantou huashan electronic devices co.,ltd . inner insulated type triac ( ii to - 220 package) ? features * repetitive peak off - state voltage: 600v * r.m.s on - state current(i t(rms) = 20 a) * high commutation dv/dt ? general description the triac h bta 8a60 is suitable for ac switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. ? absolute maximum ratings ? t a =25 ??? ? electrical characteristics ? t a =25 ?? ? symbol items min. max. unit conditions i drm repetitive peak off - state current 2 .0 ma vd=vdrm, single phase,half wave, tj=125 ?? v tm peak on - state voltage 1.6 v i t =12a, inst. measurement i+ gt1 gate trigger current ??? 30 ma v d =6v, r l =10 ohm i - gt1 gate trigger current ?v? 30 ma v d =6v, r l =10 ohm i - gt3 gate trigger current ?t? 30 ma v d =6v, r l =10 ohm v+ gt1 gate trigger voltage ??? 1.5 v v d =6v, r l =10 ohm v - gt1 gate trigger voltage ?v? 1.5 v v d =6v, r l =10 ohm v - gt3 gate trigger voltage ?t? 1.5 v v d =6v, r l =10 ohm v gd non - trigger gate voltage 0.2 v t j =125 ?? ,v d =1/2v drm (dv/dt)c critical rate of rise of off - state voltage at commutation 10 v/s tj=125 ?? ,vd=2/3vdrm (di/dt)c= - 4 .0 a/ms rth(j - c) thermal resistance 2.5 ?? /w junction to case i h holding current 2 5 ma t stg ?a?a storage temperature ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- - 40~125 ?? t j ?a?a operating junction temperature ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- - 40~125 ?? p gm ?a?a peak gate power dissipation ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- 5w v drm ?a?a repeti tive peak off - state voltage ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- 600v i t ? rms ? ?a?a r.m.s on - state current ? tc = 66 ??? ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- 20 a v gm ?a?a peak gate voltage ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- 10v i gm ?a?a peak gate current ?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?-?- 2.0a i tsm ?a?a surge on - state current (one c ycle, 50/60hz,peak,non - repetitive) ?- ?- ?- ?- ?- ?- ?- 170/190 a v iso ?a?a rms isolation breakdown voltage ?-?-?-?- ?-?-?- ?- ?-?- ?- ?-?-?-?- ?-?-?-?-?-?- 2 50 0v h bta 20 a60
shantou huashan electronic devices co.,ltd . ? performance curves fig 1. gate characteristics fig 2. on - state voltage gate current (ma) on - state voltage [v] fig 3 . gate trigger voltage vs. junction fig 4 . on state current vs. maximum temperature power dissipation junction temperature [ ?? ] rms on - state current fig 5 . on state current vs. fig 6 . surge on - state current rating allowable case temperature ( non - repetitive ) rms on - state current [ a] time ? cycles ? h bta 20 a60 allowable case temp. [ ?? c] surge on - state current [a] power dissipation [w] on - state current [a] gate voltage (v) 10 1 10 2 10 3 0.1 1 10
shantou huashan electronic devices co.,ltd . fig 7. gate trigger current vs. fig 8. transient thermal impedance junction temperature junction temperature [ ?? ] time ? sec ? fig 9. gate trig ger characteristics test circuit 10 |? 10 |? 10 |? test procedure ? test procedure v test procedure t h bta 20 a60 transient thermal impedance [ ?? /w ]
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